UNISONIC TECHNOLOGIES CO., LTD
TF2123
N-CHANNEL JFET CAPACITOR
MICROPHONE APPLICATIONS
DESCRIPTION
N-CHANNEL JFET
The UTC
TF2123
uses advanced trench technology to provide
excellent R
DS (ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use in capacitor microphone
applications.
FEATURES
*Suited for use in audio, telephone capacitor microphones.
*Good voltage characteristic.
*Good transient characteristic.
ORDERING INFORMATION
Ordering Number
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
Note: Pin Assignment: S: Source
D: Drain
TF2123L-xx-AE3-R
Package
SOT-23
SOT-523
SOT-723
G: Gate
(1) R: Tape Reel
(2) AE3: SOT-23, AN3: SOT-523, AQ3: SOT-723
(3) xx: refer to CLASSIFICATION OF I
DSS
(4) G: Halogen Free and Lead Free
Pin Assignment
1
2
3
S
D
G
S
D
G
S
D
G
Packing
Tape Reel
Tape Reel
Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
MARKING
TF2123-E3
TF2123-E4
TF2123-E5
E3
E4
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TF2123
ABSOLUTE MAXIMUM RATINGS
( T
A
=25°С, unless otherwise specified )
SYMBOL
V
GDO
I
G
I
D
P
D
T
J
T
STG
PARAMETER
Gate Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
N-CHANNEL JFET
RATING
-20
10
10
100
150
-55~+150
UNIT
V
mA
mA
mW
°С
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
GDO
V
GS(OFF)
I
DSS
TEST CONDITIONS
I
G
=-100μA
V
DS
=2V, I
D
=1μA
TF2123-E3
V
DS
=2V, V
GS
=0V
TF2123-E4
TF2123-E5
I
DSS
=100μA
V
DD
=2V, R
L
=2.2kΩ,
I
DSS
=250μA
C
g
=5pF
I
DSS
=350μA
V
DS
=2V, V
GS
=0V
V
DS
=2, V
GS
=0, f=1MHz
I
DSS
=100μA
V
DD
=2V, R
L
=2.2kΩ,
C
g
=5pF, f=1kHz,
I
DSS
=250μA
V
IN
=10mV
I
DSS
=350μA
V
IN
=10mV, R
L
=2.2kΩ, C
g
=5pF,
f=1kH, V
DD
=2V to1.5V
V
IN
=10mV, R
L
=2.2kΩ, C
g
=5pF,
V
DD
=2V, f=1kHz to 110kHz
R
L
=1kΩ
V
DD
=2V, C
g
=5pF,
A-curve filter
R
L
=2.2kΩ
V
DD
=2V, R
L
=2.2kΩ, C
g
=5pF, f=1kHz,
V
IN
=50mV
MIN
-20
100
150
210
TYP MAX UNIT
V
-0.38
V
170
μA
270
μA
350
μA
98
μA
244
μA
337
μA
1.43
mS
5.0
pF
0.1
dB
1.95
dB
2.25
dB
-0.5
-0.2
-107
-102
0.9
dB
dB
dB
dB
%
PARAMETER
Gate Drain Breakdown Voltage
Gate Source Cut off Voltage
Zero-Gate Voltage Drain Current
Drain Current
Forward Transfer Admittance
Input Capacitance
Voltage Gain
Delta Voltage Gain
Frequency Characteristic
Output Noise Voltage
Total Harmonic distortion
I
D
lyfsl
C
ISS
G
V
∆G
V
∆G
V
(f)
V
NO
THD
CLASSIFICATION OF I
DSS
RANK
RANGE
E3
100-170
E4
150-270
E5
210-350
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-106.C
TF2123
TEST CIRCUIT
(T
A
=25C)
N-CHANNEL JFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-106.C
TF2123
TYPICAL CHARACTERISTICS
N-CHANNEL JFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-106.C
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