UNISONIC TECHNOLOGIES CO., LTD
3N65
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N65
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
high rugged avalanche characteristics. This power MOSFET is
usually used in high speed switching applications at power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 3.8Ω @ V
GS
= 10V, I
D
= 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-126
DFN-8(5×6)
S: Source
1
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
G
D
D
7
-
-
-
-
-
-
-
-
-
D
8
-
-
-
-
-
-
-
-
-
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Bulk
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N65L-TA3-T
3N65G-TA3-T
3N65L-TF1-T
3N65G-TF1-T
3N65L-TF3-T
3N65G-TF3-T
3N65L-TM3-T
3N65G-TM3-T
3N65L-TMS-T
3N65G-TMS-T
3N65L-TMS2-T
3N65G-TMS2-T
3N65L-TMS4-T
3N65G-TMS4-T
3N65L-TN3-R
3N65G-TN3-R
3N65L-T60-K
3N65G-T60-K
-
3N65G-K08-5060-R
Note: Pin Assignment: G: Gate
D: Drain
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-590.F
3N65
MARKING
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
MARKING
Power MOSFET
TO-126
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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2 of 8
QW-R502-590.F
3N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 2)
I
DM
12
A
Single Pulsed (Note 3)
E
AS
200
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
TO-220F/TO-220F1
34
TO-251/TO-252/TO-251S
50
Power Dissipation
P
D
W
TO-251S2/TO-251S4
TO-126
17
DFN-8(5×6)
25
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
3.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
UNIT
PARAMETER
SYMBOL
RATING
TO-220/TO-220F
62.5
TO-220F1
TO-251/TO-252/TO-251S
110
Junction to Ambient
θ
JA
TO-251S2/TO-251S4
TO-126
132
DFN-8(5×6)
75 (Note)
TO-220
1.67
TO-220F/TO-220F1
3.68
TO-251/TO-252/TO-251S
2.5
Junction to Case
θ
JC
TO-251S2/TO-251S4
TO-126
7.36
DFN-8(5×6)
5 (Note)
2
Note: The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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3 of 8
QW-R502-590.F
3N65
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
V/°C
4.0
3.8
500
65
20
45
80
140
75
70
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 650 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, I
D
=1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
0.6
2.0
2.8
430
50
11
32
64
115
60
51
13
11
1.4
3.0
12
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-590.F
3N65
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-590.F
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