TPC8080(TE12L,Q) datasheet, PDF

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TPC8080(TE12L,Q): DescriptionTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO; CategoryDiscrete semiconductor The transistor; File Size223KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TPC8080(TE12L,Q) Overview

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

TPC8080(TE12L,Q) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.9 W
surface mount	YES

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TPC8080

MOSFETs

Silicon N-Channel MOS (U-MOS)

TPC8080

1. Applications

•

Notebook PCs

Mobile Handsets

2. Features

(1)

(2)

(3)

(4)

Small footprint due to a small and thin package

Low drain-source on-resistance: R

DS(ON)

= 2.2 mΩ (typ.) (V

= 10 V)

Low leakage current: I

DSS

= 10

µA

(max) (V

= 30 V)

Enhancement mode: V

= 1.3 to 2.3 V (V

= 10 V, I

= 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP-8

25

4. Absolute Maximum Ratings (Note) (T

= 25



unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Channel temperature

Storage temperature

(t = 10 s)

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Symbol

DSS

GSS

stg

Rating

±20

1.9

1.0

842

150

-55 to 150



Unit

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-07-27

Rev.1.0

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