SSP7492N
Elektronische Bauelemente
6.2A, 150V, R
DS(ON)
88 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8PP
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
DS(on)
and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
SOP-8PP
MPQ
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min.
Max.
0.85
1.00
5.3 BSC.
0.15
0.25
3.8 BCS.
6.05 BCS.
0.03
0.30
4.35 BCS.
0.40
0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min.
Max.
0
°
10
°
5.2 BCS
0.30
0.50
1.27BSC
5.55 BCS.
0.10
0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
150
±20
6.2
5
30
6.7
5
3.2
-55~150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t≦10 sec
Steady State
R
θJA
25
65
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 1 of 4
SSP7492N
Elektronische Bauelemente
6.2A, 150V, R
DS(ON)
88 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
1
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min
Static
1
-
-
-
15
-
-
-
-
Typ
-
-
-
-
-
-
-
32
0.75
Max
-
±100
1
25
-
88
96
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test condition
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=
±20V
V
DS
=120V, V
GS
=0
V
DS
=120V, V
GS
=0,T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=5A
V
GS
=5.5V, I
D
=4A
V
DS
=15V,
,
I
D
=5A
I
S
=3.4A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
23
7.4
9
14
15
70
31
2599
167
90
-
-
-
-
-
-
-
-
-
-
pF
V
DS
=15V, V
GS
=0, f=1MHz
nS
I
D
=5A, V
DS
=75V
V
GEN
=10V
R
L
=15Ω, R
GEN
=6Ω
nC
I
D
=5A
V
DS
=75V
V
GS
=5.5V
Notes:
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 2 of 4
SSP7492N
Elektronische Bauelemente
6.2A, 150V, R
DS(ON)
88 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 3 of 4
SSP7492N
Elektronische Bauelemente
6.2A, 150V, R
DS(ON)
88 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 4 of 4
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