10N70G-TF3-T datasheet, PDF - EEWORLD Datasheet

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10N70G-TF3-T: DescriptionN-CHANNEL POWER MOSFE; CategoryDiscrete semiconductor The transistor; File Size250KB，7 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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10N70G-TF3-T Overview

N-CHANNEL POWER MOSFE

10N70G-TF3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	600 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	40 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

10N70

10A, 700V N-CHANNEL

POWER MOSFET



DESCRIPTION

Power MOSFET

The

UTC 10N70

is a high voltage and high current power

MOSFET, designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and have a

high rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power supplies,

PWM motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* R

DS(ON)

<1.2Ω@ V

= 10V, I

= 5A

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability



SYMBOL



ORDERING INFORMATION

Package

TO-220F1

TO-220F2

TO-220F

Pin Assignment

Packing

Tube

Ordering Number

Lead Free

Halogen Free

10N70L-TF1-T

10N70G-TF1-T

10N70L-TF2-T

10N70G-TF2-T

10N70L-TF3-T

10N70G-TF3-T

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 7

QW-R502-572.F

10N70G-TF3-T Related Products

	10N70G-TF3-T	10N70G-TF1-T	10N70L-TF1-T	10N70L-TF3-T	10N70G-TF2-T	10N70L-TF2-T	10N70_15
Description	N-CHANNEL POWER MOSFE	N-CHANNEL POWER MOSFE	N-CHANNEL POWER MOSFE	N-CHANNEL POWER MOSFE	N-CHANNEL MOSFET ARRAY FOR SWITCHING	N-CHANNEL MOSFET ARRAY FOR SWITCHING	N-CHANNEL MOSFET ARRAY FOR SWITCHING
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	-	-
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-	-	-
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	-	-
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	-	-
Contacts	3	3	3	3	-	-	-
Reach Compliance Code	compli	compli	compli	compli	-	-	-
Avalanche Energy Efficiency Rating (Eas)	600 mJ	700 mJ	700 mJ	700 mJ	-	-	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	-	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-	-
Minimum drain-source breakdown voltage	700 V	700 V	700 V	700 V	-	-	-
Maximum drain current (Abs) (ID)	10 A	10 A	10 A	10 A	-	-	-
Maximum drain current (ID)	10 A	10 A	10 A	10 A	-	-	-
Maximum drain-source on-resistance	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω	-	-	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	-
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	-	-
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	-	-
Number of components	1	1	1	1	-	-	-
Number of terminals	3	3	3	3	-	-	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-	-
Maximum power dissipation(Abs)	50 W	50 W	50 W	50 W	-	-	-
Maximum pulsed drain current (IDM)	40 A	40 A	40 A	40 A	-	-	-
surface mount	NO	NO	NO	NO	-	-	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	-	-

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