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PCP1103

Description
Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size90KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

PCP1103 Overview

Bipolar Transistor

PCP1103 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompli
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)3.5 W
surface mountYES
Ordering number : ENA1346A
PCP1103
Bipolar Transistor
–30V, –1.5A, Low VCE(sat) PNP Single PCP
Applications
http://onsemi.com
DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers
Features
Adoption of MBIT process
Low collector to emitter saturation voltage
High allowable power dissipation
Large current capacity
High speed switching
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
--30
--30
-
-5
-
-1.5
-
-5
Unit
V
V
V
A
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
PCP1103-TD-H
Packing Type: TD
Marking
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113 TKIM TC-00003073/N1208EA MSIM TC-00001718 No.A1346-1/5
RF
LOT No.
2.5

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