BAV99-A7 datasheet, PDF - EEWORLD Datasheet

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BAV99-A7: DescriptionDiode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5μA@ 70V reverse recovery time (trr): 6ns Operating temperature: +150℃@(Tj); File Size777KB，2 Pages; ManufacturerZRE

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BAV99-A7 Overview

Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5μA@ 70V reverse recovery time (trr): 6ns Operating temperature: +150℃@(Tj)

BAV99-A7 Parametric

Parameter Name	Attribute value
Diode configuration	1 pair in series
power	225mW
DC reverse withstand voltage (Vr)	70V
Average rectified current (Io)	200mA
Forward voltage drop (Vf)	1.25V@150mA
Reverse current (Ir)	2.5μA@70V
Reverse recovery time (trr)	6ns
Operating temperature	+150℃@(Tj)

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BAW56/ BAV70/ BAV99

SOT-23

贴片塑封开关二极管

SOT-23 Plastic-Encapsulate Switching Diode

特征

Features

SOT-23



开关速度小于

6nS; Fast Switching Device (TRR <6nS)



最大功率耗散

225mW; Power Dissipation of 225mW



高稳定性和可靠性。High

Stability and High Reliability



反向漏电流小。Low

reverse leakage

机械数据

Mechanical Data



封装:

SOT-23

封装

SOT-23 Small Outline Plastic Package

环氧树脂

UL

易燃等级

Epoxy UL: 94V-0

安装½½: 任意

Mounting Position: Any

极限值和温度特性(

TA = 25℃

除非另有规定)

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

参数

Parameters

符号

Symbol

VR

Pd

Tj

Ts

I

O

I

FM

I

FSM

R

θJA

数值

Value

70

225

150

-65-+150

200

400

2.0

500

单½

Unit

V

mW

℃

mA

A

℃/W

反向电压

Reverse Voltage

功率消耗

Power Dissipation

工½结温

Operating junction temperature

存储温度

Storage temperature range

平均整流电流

Average Rectified Current

正向(不重复)电流

Non-repetitive Peak Forward Current

正向(不重复)浪涌电流

Peak Forward Surge Current

@tp=1ms; TA=25℃

典型热阻

Typical thermal resistance

Valid provided that electrodes are kept at ambient temperature.

电特性

Electrical Characteristics

(

Ratings at 25℃

符号

Symbols

VRB

ambient temperature unless otherwise specified).

参数

Parameter

反向击穿电压

Reverse Voltage

反向漏电电流

Reverse Leakage Current

正向电压

Forward Voltage

反向恢复时间

Reverse Recovery Time

结电容

Capacitance

测试条件

Test Condition

IB=100uA

VR=70V

IF=1mA

界限

Limits

Min

70

---

Max

---

2.5

0.715

0.855

1.00

1.25

6

1.5

单½

Unit

V

uA

I

R

V

F

IF=10mA

IF=50mA

IF=150mA

IF= IR=10mA,RL=100Ω

IRR=0.1xIR

VR=0V, f=1MHZ

V

T

RR

C

T

nS

pF

Date:2018/8/2

BAV99-A7 Related Products

	BAV99-A7	BAV70-A4
Description	Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5μA@ 70V reverse recovery time (trr): 6ns Operating temperature: +150℃@(Tj)	Diode configuration: 1 pair of common cathodes Power: 225mW DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5μA@ 70V reverse recovery time (trr): 6ns Operating temperature: +150℃@(Tj)
Diode configuration	1 pair in series	1 pair of common cathodes
power	225mW	225mW
DC reverse withstand voltage (Vr)	70V	70V
Average rectified current (Io)	200mA	200mA
Forward voltage drop (Vf)	1.25V@150mA	1.25V@150mA
Reverse current (Ir)	2.5μA@70V	2.5μA@70V
Reverse recovery time (trr)	6ns	6ns
Operating temperature	+150℃@(Tj)	+150℃@(Tj)

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