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1N4007

Description
Diode configuration: Independent DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@1A Reverse current (Ir): 10μA@1kV
File Size2MB,3 Pages
ManufacturerZRE
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1N4007 Overview

Diode configuration: Independent DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@1A Reverse current (Ir): 10μA@1kV

1N4007 Parametric

Parameter NameAttribute value
Diode configurationDetached
DC reverse withstand voltage (Vr)1kV
Average rectified current (Io)1A
Forward voltage drop (Vf)1.1V@1A
Reverse current (Ir)10μA@1kV
1N4001~1N4007
1.0Amp Standard Silicon Rectifiers
DO-41
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Open Junction chip
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed
250 C/10 seconds at terminals
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
Mechanical Data
Case
: Molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity
: Polarity symbol marking on body
Mounting Position
: Any
Weight
: 0.0088 ounce, 0.25 grams
0.030(0.75)
0.020(0.50)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,
for capacitive load current derate by 20%.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=100 C
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current T
A
=25 C
at rated DC blocking voltage T
A
=125 C
Typical junction capacitance (Note1)
Typical thermal resistance
SYMBOLS
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.10
10.0
500
21.0
65.0
-55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
V
RRM
V
RMS
V
DC
I
(AV)
A
I
FSM
V
F
I
R
C
J
R
q
JA
A
V
u
A
pF
C/W
C
Operating junction and storage temperature range
T
J
,
T
STG
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Technology Innovation Future
Rev.2018 Page 1

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