1.5KE120-G datasheet, PDF - EEWORLD Datasheet

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1.5KE120-G: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE; CategoryDiscrete semiconductor diode; File Size104KB，6 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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1.5KE120-G Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE

1.5KE120-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Breakdown voltage nominal value	120 V
Maximum clamping voltage	173 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 code	e3
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	97.2 V
surface mount	NO
Terminal surface	Tin (Sn)
Base Number Matches	1

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1500W Transient Voltage Suppressor

1.5KE-G Series

Stand-off Voltage: 6.8 ~ 600V

Power Dissipation: 1500 Watts

RoHS Device

Features

-Glass passivated chip.

-Low leakage.

-1500W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle): 0.01%.

-Uni and Bidirectional unit.

-Excellent clamping capability.

-Very fast response time.

0.375(9.53)

0.285(7.24)

1.000(25.40) Min.

DO-201

Mechanical Data

-Case: Molded plastic DO-201

-Epoxy: UL 94V-0 rate flame retardant

-Terminals: Axial leads, solderable per

MIL-STD-202, Method 208 guranteed

-Polarity: Color band denotes cathode

end except Bipolar

-Mounting position: Any

-Approx. weight: 0.844 grams

0.209(5.30) DIA.

0.189(4.79) DIA.

1.000(25.40) Min.

0.042(1.07)

DIA.

0.038(0.97)

DIA.

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

(TA=25°C unless otherwise noted)

Parameter

Peak power dissipation with a 10/1000

waveform (Note 1)

Peak pulse current with a 10/1000

μs

waveform

(Note 1)

Power dissipation on infinite heatsink at T

=75°C

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only

(JEDEC method) (Note 2)

Maximum instantaneous forward voltage at

100 A for unidirectional only(Note 3)

Operating junction and storage

temperature range

Symbol

Value

1500

Unit

See Next Table

6.5

FSM

200

3.5/5.0

, T

STG

-55 to +150

°C

NTOES:

(1) Non-repetitive current pulse, per fig.5 and derated above T

=25°C per fig.1

(2) Measured on 8.3ms single half sine-wave or equivalent square wave, equare wave, duty cycle=4 pulses per minute maximum

(3) V

<3.5V for devices of V

<200V and V

<5.0V for devices of V

>201V

REV:B

QW-BTV07

Page 1

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