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BAS70-06

Description
0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size124KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BAS70-06 Overview

0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS70-06 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0700 A
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT SCHOTTKY DIODES
BAS70, BAS70-04
BAS70-05, BAS70-06
SOT-23
Formed SMD Package
BAS70
3
3
BAS70-04
3
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
CATHODE
1
3
3
2
2
1
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
2
2
BAS70-05
BAS70-06
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2
2
1
2
2
Marking
BAS70 =
73
BAS70-04 = 74
BAS70-05 = 75
BAS70-06 = 76
Ultra High Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS (per diode)
DESCRIPTION
SYMBOL
V
R
Continuous Reverse Voltage
I
F
Continuous Forward Current
I
FRM
Repetitive Peak Voltage t
P
< 1s;
δ
< 0.5
Non Repetitive Peak Forward Current
I
FSM
tp=10ms
T
stg
Storage Temperature
T
j
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
T
amb
R
th (j-a)
VALUE
70
70
70
100
- 65 to +150
150
- 65 to +150
500
UNIT
V
mA
mA
mA
o
C
o
C
o
C
K/W
UNIT
V
V
V
µA
µA
pF
ELECTRICAL CHARACTERISTICS (T
a
=25º C unless specified otherwise) Per diode
DESCRIPTION
SYMBOL TEST CONDITION MIN
MAX
V
F
I
F
=1mA
0.41
Forward Voltage
I
F
=10mA
0.75
I
F
=15mA
1.00
*I
R
V
R
=70V
Reverse Current
10
0.1
V
R
=50V
C
d
V
R
=0V, f=1MHz
2.0
Diode Capacitance
Pulse Test: t
p
=300µs;
δ
=0.02
µ
BAS70_06Rev_1 300606E
Continental Device India Limited
Data Sheet
Page 1 of 3

BAS70-06 Related Products

BAS70-06 BAS70 BAS70-05 BAS70-04
Description 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 2 1 2 2
Processing package description ROHS COMPLIANT PACKAGE-3 Plastic, SOT-23, 3 PIN PLASTIC PACKAGE-3 LEAD FREE, MINIATURE PACKAGE-3
state ACTIVE DISCONTINUED ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair pair DUAL
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure COMMON ANODE, 2 ELEMENTS single COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials silicon silicon silicon SILICON
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V
Maximum average forward current 0.0700 A 0.2000 A 0.0700 A 0.0700 A
terminal coating MATTE Tin tin lead MATTE Tin -
Maximum power consumption limit 0.2500 W 0.2000 W 0.2500 W -
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