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BAS70

Description
0.2 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size124KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BAS70 Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BAS70 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPlastic, SOT-23, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.2000 A
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT SCHOTTKY DIODES
BAS70, BAS70-04
BAS70-05, BAS70-06
SOT-23
Formed SMD Package
BAS70
3
3
BAS70-04
3
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
Pin Configuration
1 = ANODE
2 = CATHODE
3 = ANODE/
CATHODE
1
3
3
2
2
1
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
2
2
BAS70-05
BAS70-06
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2
2
1
2
2
Marking
BAS70 =
73
BAS70-04 = 74
BAS70-05 = 75
BAS70-06 = 76
Ultra High Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS (per diode)
DESCRIPTION
SYMBOL
V
R
Continuous Reverse Voltage
I
F
Continuous Forward Current
I
FRM
Repetitive Peak Voltage t
P
< 1s;
δ
< 0.5
Non Repetitive Peak Forward Current
I
FSM
tp=10ms
T
stg
Storage Temperature
T
j
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
T
amb
R
th (j-a)
VALUE
70
70
70
100
- 65 to +150
150
- 65 to +150
500
UNIT
V
mA
mA
mA
o
C
o
C
o
C
K/W
UNIT
V
V
V
µA
µA
pF
ELECTRICAL CHARACTERISTICS (T
a
=25º C unless specified otherwise) Per diode
DESCRIPTION
SYMBOL TEST CONDITION MIN
MAX
V
F
I
F
=1mA
0.41
Forward Voltage
I
F
=10mA
0.75
I
F
=15mA
1.00
*I
R
V
R
=70V
Reverse Current
10
0.1
V
R
=50V
C
d
V
R
=0V, f=1MHz
2.0
Diode Capacitance
Pulse Test: t
p
=300µs;
δ
=0.02
µ
BAS70_06Rev_1 300606E
Continental Device India Limited
Data Sheet
Page 1 of 3

BAS70 Related Products

BAS70 BAS70-05 BAS70-04 BAS70-06
Description 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 1 2 2 2
Processing package description Plastic, SOT-23, 3 PIN PLASTIC PACKAGE-3 LEAD FREE, MINIATURE PACKAGE-3 ROHS COMPLIANT PACKAGE-3
state DISCONTINUED ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair DUAL pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure single COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials silicon silicon SILICON silicon
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V
Maximum average forward current 0.2000 A 0.0700 A 0.0700 A 0.0700 A
terminal coating tin lead MATTE Tin - MATTE Tin
Maximum power consumption limit 0.2000 W 0.2500 W - 0.2500 W
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