Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 7 W |
| Maximum power dissipation(Abs) | 7 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 25 MHz |
| VCEsat-Max | 0.35 V |
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