DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAT54 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 2001 Oct 12
2002 Mar 04
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
Top view
handbook, 2 columns
BAT54 series
PINNING
DESCRIPTION
PIN
BAT54
1
2
3
a
n.c.
k
BAT54A
k
1
k
2
a
1
, a
2
BAT54C
a
1
a
2
k
1
, k
2
BAT54S
a
1
k
2
k
1
, a
2
3
1
2
MGC421
MARKING
TYPE NUMBER
BAT54
BAT54A
BAT54C
BAT54S
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W: Made in China.
MARKING CODE
(1)
L4∗
L42 or
∗V3
L43 or
∗W1
L44 or
∗V4
Fig.1
Simplified outline (SOT23) and pin
configuration.
3
1
2
n.c.
MLC357
3
1
2
MLC360
(1) BAT54
(2) BAT54A
3
1
2
MLC359
3
1
2
MLC358
(3) BAT54C
(4) BAT54S
Fig.2 Diode configuration and symbol.
2002 Mar 04
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
Per device
P
tot
total power dissipation
T
amb
≤
25
°C
−
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
−
−
−
−
PARAMETER
CONDITIONS
BAT54 series
MIN.
MAX.
UNIT
30
200
300
600
+150
125
V
mA
mA
mA
°C
°C
−65
−
230
mW
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; see Fig.4
when switched from I
F
= 10 mA
to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA;
see Fig.6
f = 1 MHz; V
R
= 1 V; see Fig.5
240
320
400
500
800
2
5
mV
mV
mV
mV
mV
μA
ns
PARAMETER
CONDITIONS
MAX.
UNIT
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
C
d
diode capacitance
10
pF
2002 Mar 04
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT54 series
MSA892
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
I
R
(μA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2)
(3)
1
(3)
10
1
0
0.4
0.8
VF (V)
1.2
10
1
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Forward current as a function of forward
voltage; typical values.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
15
MSA891
Cd
(pF)
handbook, halfpage
I
F
dI F
10
dt
10% t
5
Qr
90%
IR
tf
MRC129 - 1
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
2002 Mar 04
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
PACKAGE OUTLINE
BAT54 series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2002 Mar 04
5