300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Parameter Name | Attribute value |
Number of terminals | 3 |
Transistor polarity | NPN |
Maximum collector current | 0.3000 A |
Maximum Collector-Emitter Voltage | 40 V |
state | ACTIVE |
packaging shape | ROUND |
Package Size | CYLINDRICAL |
Terminal form | WIRE |
Terminal location | BOTTOM |
Packaging Materials | PLASTIC/EPOXY |
structure | DARLINGTON |
Number of components | 1 |
Transistor component materials | SILICON |
Maximum ambient power consumption | 0.6000 W |
Transistor type | GENERAL PURPOSE SMALL SIGNAL |
Minimum DC amplification factor | 7000 |
Rated crossover frequency | 60 MHz |
2N5306 | 2N5305 | 2N5306A | |
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Description | 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
Number of terminals | 3 | 3 | 3 |
Transistor polarity | NPN | NPN | NPN |
Maximum collector current | 0.3000 A | 0.3000 A | 0.3000 A |
Maximum Collector-Emitter Voltage | 40 V | 40 V | 40 V |
state | ACTIVE | ACTIVE | ACTIVE |
packaging shape | ROUND | ROUND | ROUND |
Package Size | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Terminal form | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM |
Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
structure | DARLINGTON | DARLINGTON | DARLINGTON |
Number of components | 1 | 1 | 1 |
Transistor component materials | SILICON | SILICON | SILICON |
Maximum ambient power consumption | 0.6000 W | 0.6000 W | 0.6000 W |
Transistor type | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL |
Minimum DC amplification factor | 7000 | 7000 | 7000 |
Rated crossover frequency | 60 MHz | 60 MHz | 60 MHz |