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2N5306

Description
300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size116KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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2N5306 Overview

300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5306 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.3000 A
Maximum Collector-Emitter Voltage40 V
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption0.6000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor7000
Rated crossover frequency60 MHz

2N5306 Related Products

2N5306 2N5305 2N5306A
Description 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.3000 A 0.3000 A 0.3000 A
Maximum Collector-Emitter Voltage 40 V 40 V 40 V
state ACTIVE ACTIVE ACTIVE
packaging shape ROUND ROUND ROUND
Package Size CYLINDRICAL CYLINDRICAL CYLINDRICAL
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure DARLINGTON DARLINGTON DARLINGTON
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 0.6000 W 0.6000 W 0.6000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 7000 7000 7000
Rated crossover frequency 60 MHz 60 MHz 60 MHz

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