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2N5306A

Description
300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size116KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N5306A Overview

300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5306A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.3000 A
Maximum Collector-Emitter Voltage40 V
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption0.6000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor7000
Rated crossover frequency60 MHz

2N5306A Related Products

2N5306A 2N5305 2N5306
Description 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.3000 A 0.3000 A 0.3000 A
Maximum Collector-Emitter Voltage 40 V 40 V 40 V
state ACTIVE ACTIVE ACTIVE
packaging shape ROUND ROUND ROUND
Package Size CYLINDRICAL CYLINDRICAL CYLINDRICAL
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure DARLINGTON DARLINGTON DARLINGTON
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 0.6000 W 0.6000 W 0.6000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 7000 7000 7000
Rated crossover frequency 60 MHz 60 MHz 60 MHz
Application of Analog Signal Isolation Amplifier Technology
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