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MMBD4448HT

Description
0.25 A, 80 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size177KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MMBD4448HT Overview

0.25 A, 80 V, SILICON, SIGNAL DIODE

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
MMBD4448HT/
HTA/HTC/HTS
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance, Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
150mW
Switching Diodes
SOT-523
A
D
Maximum Ratings
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
R
©
JA
P
D
T
J
T
STG
Symbol
V
(BR)
I
R
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @1.0­s
@1.0s
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
Rating
100
80
57
500
250
4.0
2.0
833
150
150
-65 to +150
Unit
V
V
V
mA
mA
A
/W
mW
G
B
C
E
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage
Current
Min
80V
---
0.62
---
---
---
---
---
Max
---
0.1­A
25
nA
0.72V
0.855V
1.0V
1.25V
3.5pF
4.0ns
Test Conditions
I
R
=2.5­A
V
R
=70V
V
R
=20V
I
F
=5.0mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=6V, f=1MHZ
I
F
=5mA,
V
R
=6V
DIM
A
B
C
D
E
G
H
J
K
NOTE
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
Revision: A
www.mccsemi.com
1 of 3
2011/01/01

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