ES1G datasheet, PDF - EEWORLD Datasheet

ES1G: Description1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size60KB，2 Pages; ManufacturerMIC; Websitehttp://www.cnmic.com/

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1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, HSMA, 2 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0600 us
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	1 A

	ES1G	ES1E	ES1J
Description	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	-	2
Number of components	1	-	1
Processing package description	Plastic, HSMA, 2 PIN	-	SMA, 2 PIN
state	DISCONTINUED	-	TRANSFERRED
packaging shape	Rectangle	-	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE
surface mount	Yes	-	Yes
Terminal form	C BEND	-	C BEND
terminal coating	tin lead	-	NOT SPECIFIED
Terminal location	pair	-	pair
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy
structure	single	-	single
Diode component materials	silicon	-	silicon
Diode type	Signal diode	-	Signal diode
Maximum reverse recovery time	0.0600 us	-	0.0600 us
Maximum repetitive peak reverse voltage	400 V	-	600 V
Maximum average forward current	1 A	-	1 A

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