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ES07B

Description
0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB
CategoryDiscrete semiconductor    diode   
File Size147KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

ES07B Overview

0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB

ES07B Parametric

Parameter NameAttribute value
Parts packaging codeSOD-123FL
Manufacturer packaging codeSOD-123FL
Surface Mount Rectifiers
ES07B-ES07D
REVERSE VOLTAGE: 100 -
200
V
CURRENT:
1.0
A
SOD - 123FL
Features
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
High temperature soldering:
250℃/10 seconds at terminals
1.9± 0.1
Cathode Band
Top View
2.8
±
0.1
1.4± 0.15
0.10-0.30
0.6
±
0.25
3.7
±
0.2
Mechanical Data
Case:JEDEC SOD-123FL,molded plastic over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.01 gram
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single hase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
ABSOLUTE RATINGS
ES07B
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword
rectified current
T
A
=65℃
(NOTE 1)
ES07D
ED
200
140
200
1.0
1.0
±
0.2
EB
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
UNITS
V
V
V
A
Peak forward surge current 8.3ms single
half-sine-wave superimposed
on rated load
T
L
=25℃
(NOTE 2)
I
FSM
30
A
Typical thermal resistance
R
JθA
t
rr
T
j
T
STG
180
25
- 55 --- + 150
- 55 --- + 150
K/W
ns
Maximum reverse recovery time (NOTE 3)
Operating temperature range
Storage temperature range
NOTES:1.Averaged over any 20 ms period.
2. Thermal resistance junction to ambient, 6.0 mm
2
coppeer pads to each terminal.
3.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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