CD0805-B0230 datasheet, PDF - EEWORLD Datasheet

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CD0805-B0230: Description0.03 A, 45 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size321KB，9 Pages; ManufacturerETC1

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CD0805-B0230 Overview

0.03 A, 45 V, SILICON, SIGNAL DIODE

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Features

■

Applications

■

Lead free as standard

RoHS compliant*

Leadless

Low stored charge

Cellular phones

PDAs

Desktop PCs and

notebooks

Digital cameras

MP3 players

CD0805-xxxx products

are currently available,

although not recom-

mended for new designs. Use

CD1005-xxxx

products as an

alternative.

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

smaller electronic components.

Bourns offers small-signal high-speed Schottky Barrier Diodes for switching and rectification applications, in compact chip package 0805 size

format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Diodes offer a forward

current of 30 mA, 100 mA or 200 mA, a reverse voltage of 30 V, 40 V or 45V and also have a low forward voltage option. The diodes are lead-

free with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and

government regulations on lead-free components.

Bourns

Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes

roll away much more difficult.

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CD0805-

B00340

CD0805-

B0130

CD0805-

B0130L

CD0805-

B0145

CD0805-

B0230

CD0805-

B0245

Unit

Forward Voltage (Max.)

Capacitance Between

Terminals (Max.)

(f = 1 MHz)

Reverse Current (Max.)

Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)

Symbol

Schottky Barrier Chip Diode Series - 0805

0.37

(If = 1 mA)

(Vr = 1 V)

(Vr = 40 V)

1.00

(If = 0.1 A)

(Vr = 10 V)

(Vr = 25 V)

0.44

(If = 0.1 A)

(Vr = 10 V)

(Vr = 30 V)

0.55

(If = 0.1 A)

(Vr = 10 V)

(Vr = 45 V)

0.50

(If = 0.2 A)

(Vr = 10 V)

(Vr = 30 V)

0.55

(If = 0.2 A)

(Vr = 10 V)

(Vr = 45 V)

µA

Parameter

Repetitive Peak

Reverse Voltage

Average Forward Current

Forward Current,

Surge Peak

Power Dissipation

Storage Temperature

Junction Temperature

CD0805-

B00340

CD0805-

B0130

CD0805-

B0130L

CD0805-

B0145

CD0805-

B0230

CD0805-

B0245

Unit

VRRM

Isurge

TSTG

500*

200

100

1000*

300

100

1000*

300

100

1000*

300

200

3000*

300

200

3000*

250

°C

-40 to +125

How To Order

* Condition: 8.3 ms single half sine-wave superimposed on rate load

(JEDEC method).

CD 0805 - B 01 30 L

Common Code

Chip Diode

Package

• 0805

Model

B = Schottky Barrier Series

Average Forward Current (Io) Code

003 = 30 mA

01 = 100 mA

02 = 200 mA

(Code x 1000 mA = Average Forward Current)

Reverse Voltage (VR) Code

30 = 30 V

40 = 40 V

45 = 45 V

Forward Voltage Suffix

L = Low Forward Voltage Vf (CD0805-B0130L)

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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