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2SA1037-Q

Description
PNP Silicon Epitaxial Transistors
File Size168KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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2SA1037-Q Overview

PNP Silicon Epitaxial Transistors

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA1037-Q
2SA1037-R
2SA1037-S
Features
Small Package
Mounting:any position
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
(unless otherwise noted)
PNP Silicon
Epitaxial Transistors
SOT-23
A
D
Maximum Ratings @ T
a
= 25
Symbol
I
C
P
D
T
J
T
STG
Parameter
Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature Range
Value
-0.15
0.2
150
-55 to +150
Unit
A
W
C
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
OFF CHARACTERISTICS
V(
BR
)CEO
V(
BR
)CBO
V(
BR
)EBO
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc,I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-50uAdc,I
E
=0)
Collector-Base Breakdown Voltage
(I
E
=-50uAdc,I
C
=0)
Collector-Base Cutoff Current
(V
CB
=-60Vdc, I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-1.0mAdc, V
CE
=-6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-5.0mAdc, I
B
=-5.0mAdc)
Transition Frequency
(V
CE
=-12Vdc,I
C
=-2mAdc,f=30MHZ)
Min
-50
-60
-6.0
Max
Units
G
H
J
V
V
V
-0.1
-0.1
µAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
I
CBO
I
EBO
ON CHARACTERISTICS
H
FE
V
CE(sat)
)
7
120
560
-0.5
Vdc
MHZ
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
120
Suggested Solder
Pad Layout
.031
.800
CLASSIFICATION OF
h
FE
Rank
Range
Marking
Q
120-270
FQ
R
180-390
FR
S
270-560
FS
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision:
A
www.mccsemi.com
1 of 2
2011/01/01

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