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1N4002G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size113KB,2 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
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1N4002G Overview

SIGNAL DIODE

1N4002G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
A GENERAL PURPOSE GLASS PASSIVATED RECTIFIER
1N4001G THRU 1N4007G
FEATURES
UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND
GLASS PASSIVATED CHIP JUNCTION
LOW COST
HIGH SURGE CURRENT CAPABILITY
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
.205(5.2)
.166(4.2)
.107(2.7)
.080(2.0)
MECHANICAL DATA
CASE: TRANSFER MOLDED, DO41, DIMENSIONS IN INCHES AND (MILLIMETERS)
LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208
POLARITY: CATHODE INDICATED BY COLOR BAND
WEIGHT: 0.34 GRAMS
1.0(25.4)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
0.375” (9.5mm) LEAD LENGTH AT TA=55°C
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
SINE-WAVE SUPERIMPOSED ON RATED LOAD
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θja
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
15
50
-55 TO + 175
-55 TO + 175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
PF
ºC /W
ºC
ºC
ELECTRICAL CHARACTERISTICS (AT T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS
V
μA
μA
MAXIMUM FORWARD VOLTAGE AT I
O
DC
V
F
1.1
MAXIMUM REVERSE CURRENT AT 25 ºC
I
R
5
MAXIMUM REVERSE CURRENT AT 100 ºC
I
R
50
NOTE: 1. MEASURED AT 1MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 VOLTS
2. BOTH LEADS ATTACHED TO HEAT SINK 20x20x1t(mm) COPPER PLATE AT LEAD LENGTH 5mm
1N4001G THRU 1N4007G
Page:
1

1N4002G Related Products

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Description SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE SILICON, SIGNAL DIODE
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE ACTIVE -
Diode type SIGNAL DIODE Signal diode SIGNAL DIODE Signal diode Signal diode Signal diode -
Number of terminals - 2 2 2 2 - -
Number of components - 1 1 1 1 - -
Processing package description - PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 Plastic, DO-41, 2 PIN - -
packaging shape - round ROUND round round - -
Package Size - LONG FORM LONG FORM LONG FORM LONG FORM - -
Terminal form - Wire WIRE Wire Wire - -
Terminal location - AXIAL AXIAL AXIAL AXIAL - -
Packaging Materials - Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy - -
structure - single SINGLE single single - -
Shell connection - isolation ISOLATED isolation isolation - -
Diode component materials - silicon SILICON silicon silicon - -
Maximum repetitive peak reverse voltage - 1000 V 600 V 400 V 50 V - -
Maximum average forward current - 1 A 1 A 1 A 1 A - -

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