1N4006G datasheet, PDF - EEWORLD Datasheet

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1N4006G: DescriptionSILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size113KB，2 Pages; ManufacturerFRONTIER; Websitehttp://www.frontierusa.com/

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SILICON, SIGNAL DIODE

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Frontier Electronics Corp.

667 E. COCHRAN STREET, SIMI VALLEY, CA 93065

TEL: (805) 522-9998

FAX: (805) 522-9989

E-mail:

frontiersales@frontierusa.com

Web:

http://www.frontierusa.com

A GENERAL PURPOSE GLASS PASSIVATED RECTIFIER

1N4001G THRU 1N4007G

FEATURES

UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND

GLASS PASSIVATED CHIP JUNCTION

LOW COST

HIGH SURGE CURRENT CAPABILITY

1.0(25.4)

MIN

.034(0.9)

.028(0.7)

.205(5.2)

.166(4.2)

.107(2.7)

.080(2.0)

MECHANICAL DATA

CASE: TRANSFER MOLDED, DO41, DIMENSIONS IN INCHES AND (MILLIMETERS)

LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208

POLARITY: CATHODE INDICATED BY COLOR BAND

WEIGHT: 0.34 GRAMS

1.0(25.4)

MIN

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED

SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%

RATINGS

MAXIMUM RECURRENT PEAK REVERSE VOLTAGE

MAXIMUM RMS VOLTAGE

MAXIMUM DC BLOCKING VOLTAGE

MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT

0.375” (9.5mm) LEAD LENGTH AT TA=55°C

PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF

SINE-WAVE SUPERIMPOSED ON RATED LOAD

TYPICAL JUNCTION CAPACITANCE (NOTE 1)

TYPICAL THERMAL RESISTANCE (NOTE 2)

STORAGE TEMPERATURE RANGE

OPERATING TEMPERATURE RANGE

SYMBOL 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS

RRM

RMS

FSM

θja

STG

100

200

140

200

400

280

400

1.0

-55 TO + 175

600

420

600

800

560

800

1000

700

1000

ºC /W

ºC

ELECTRICAL CHARACTERISTICS (AT T

=25°C UNLESS OTHERWISE NOTED)

CHARACTERISTICS

SYMBOL 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS

μA

MAXIMUM FORWARD VOLTAGE AT I

1.1

MAXIMUM REVERSE CURRENT AT 25 ºC

MAXIMUM REVERSE CURRENT AT 100 ºC

NOTE: 1. MEASURED AT 1MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 VOLTS

2. BOTH LEADS ATTACHED TO HEAT SINK 20x20x1t(mm) COPPER PLATE AT LEAD LENGTH 5mm

1N4001G THRU 1N4007G

Page:

1N4006G Related Products

	1N4006G	1N4007G	1N4005G	1N4004G	1N4002G	1N4001G	1N4003G
Description	SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	SIGNAL DIODE
Number of terminals	-	2	2	2	-	2	-
Number of components	-	1	1	1	-	1	-
Processing package description	-	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	-	Plastic, DO-41, 2 PIN	-
state	-	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE
packaging shape	-	round	ROUND	round	-	round	-
Package Size	-	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	-
Terminal form	-	Wire	WIRE	Wire	-	Wire	-
Terminal location	-	AXIAL	AXIAL	AXIAL	-	AXIAL	-
Packaging Materials	-	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	-	Plastic/Epoxy	-
structure	-	single	SINGLE	single	-	single	-
Shell connection	-	isolation	ISOLATED	isolation	-	isolation	-
Diode component materials	-	silicon	SILICON	silicon	-	silicon	-
Diode type	-	Signal diode	SIGNAL DIODE	Signal diode	SIGNAL DIODE	Signal diode	Signal diode
Maximum repetitive peak reverse voltage	-	1000 V	600 V	400 V	-	50 V	-
Maximum average forward current	-	1 A	1 A	1 A	-	1 A	-

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