®
LY61L12816A
Rev. 1.1
128K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revise “TEST CONDITION” for VOH, VOL on page 3
I
OH
= -8mA revised as -4mA
I
OL
=4mA revised as 8mA
Issue Date
March. 07. 2013
June. 04. 2013
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY61L12816A
Rev. 1.1
128K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L12816A is a 2,087,152-bit high speed
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY61L12816A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 8/10ns
Low power consumption:
Operating current:
50/40mA(TYP.)
Standby current:
2mA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY61L12816A
LY61L12816A(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
3.0 ~ 3.6V
2.7 ~ 3.6V
3.0 ~ 3.6V
Speed
10ns
8ns
10ns
8ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(I
CC1
,TYP.)
2mA
40mA
2mA
50mA
2mA
40mA
2mA
50mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 - A16
DQ0 – D15
CE#
WE#
OE#
LB#
UB#
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
No Connection
A0-A16
DECODER
128Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
V
CC
V
SS
NC
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L12816A
Rev. 1.1
128K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Note:
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L12816A
Rev. 1.1
128K X 16 BIT HIGH SPEED CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
Average Operating
Power supply Current
Standby Power
Supply Current
SYMBOL
V
CC
V
IH
*2
V
IL
I
LI
I
LO
V
OH
V
OL
I
CC
*1
TEST CONDITION
-8
-10
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -4mA
I
OL
= 8mA
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA,
Others at V
IL
or V
IH
MIN.
3.0
2.7
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
TYP.
3.3
3.3
-
-
-
-
-
-
65
50
50
40
-
2
*4
MAX.
3.6
3.6
V
CC
+0.3
0.8
1
1
-
0.4
80
70
60
55
30
10
UNIT
V
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
-8
-10
I
CC1
I
SB
I
SB1
CE#
≦
0.2,
-8
Others at 0.2V or Vcc-0.2V
-10
I
I/O
= 0mA;f=max
CE# =V
IH
, Others at V
IL
or V
IH
CE#
≧
V
CC
- 0.2V,
Others at 0.2V or V
CC
- 0.2V
Notes:
1. V
IH
(max) = V
CC
+ 2.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
CAPACITANCE (T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Speed
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
8/10ns
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY61L12816A
Rev. 1.1
128K X 16 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
t
BA
t
BHZ
*
t
BLZ
*
LY61L12816A-8
MIN.
MAX.
8
-
-
8
-
8
-
4.5
2
-
0
-
-
3
-
3
2
-
-
4.5
-
3
0
-
LY61L12816A-10
MIN.
MAX.
10
-
-
10
-
10
-
4.5
2
-
0
-
-
4
-
4
2
-
-
4.5
-
4
0
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
t
BW
LY61L12816A-8
MIN.
MAX.
8
-
6.5
-
6.5
-
0
-
6.5
-
0
-
5
-
0
-
2
-
-
3
6.5
-
LY61L12816A-10
MIN.
MAX.
10
-
8
-
8
-
0
-
8
-
0
-
6
-
0
-
2
-
-
4
8
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4