SD1117BD datasheet, PDF - EEWORLD Datasheet

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SD1117BD: DescriptionPower Field-Effect Transistor, 0.5A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size98KB，2 Pages; ManufacturerUniversal Semiconductor Inc

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SD1117BD Overview

Power Field-Effect Transistor, 0.5A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD1117BD Parametric

Parameter Name	Attribute value
package instruction	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.25 A
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

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SD1117BD Related Products

	SD1117BD	SD1107DD	SD1107HD	SD1117HD	SD1117DD
Description	Power Field-Effect Transistor, 0.5A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-18, 3 PIN	Power Field-Effect Transistor, 1A I(D), 100V, 6.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN	Power Field-Effect Transistor, 1.2A I(D), 60V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN	Power Field-Effect Transistor, 0.6A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-18, 3 PIN
package instruction	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	100 V	100 V	60 V	60 V
Maximum drain current (Abs) (ID)	0.25 A	0.22 A	0.36 A	0.46 A	0.28 A
Maximum drain current (ID)	0.5 A	0.5 A	1 A	1.2 A	0.6 A
Maximum drain-source on-resistance	2.5 Ω	4 Ω	6.8 Ω	4.3 Ω	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.36 W	1 W	1 W	0.36 W
Maximum pulsed drain current (IDM)	2 A	2 A	2 A	2 A	2 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	-	BCY	TO-39	TO-39	BCY
Contacts	-	3	3	3	3
JEDEC-95 code	-	TO-18	TO-39	TO-39	TO-18

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