SD1117HD datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> SD1117HD

Preview

SD1117HD: DescriptionPower Field-Effect Transistor, 1.2A I(D), 60V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size98KB，2 Pages; ManufacturerUniversal Semiconductor Inc

Download Datasheet Parametric Compare View All

SD1117HD Overview

Power Field-Effect Transistor, 1.2A I(D), 60V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN

SD1117HD Parametric

Parameter Name	Attribute value
Maker	Universal Semiconductor Inc
Parts packaging code	TO-39
package instruction	UNCASED CHIP, R-XUUC-N3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.46 A
Maximum drain current (ID)	1.2 A
Maximum drain-source on-resistance	4.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-39
JESD-30 code	R-XUUC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1 W
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

SD1117HD Related Products

	SD1117HD	SD1107DD	SD1107HD	SD1117DD	SD1117BD
Description	Power Field-Effect Transistor, 1.2A I(D), 60V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN	Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-18, 3 PIN	Power Field-Effect Transistor, 1A I(D), 100V, 6.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN	Power Field-Effect Transistor, 0.6A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-18, 3 PIN	Power Field-Effect Transistor, 0.5A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	100 V	100 V	60 V	60 V
Maximum drain current (Abs) (ID)	0.46 A	0.22 A	0.36 A	0.28 A	0.25 A
Maximum drain current (ID)	1.2 A	0.5 A	1 A	0.6 A	0.5 A
Maximum drain-source on-resistance	4.3 Ω	4 Ω	6.8 Ω	2.5 Ω	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1 W	0.36 W	1 W	0.36 W	0.3 W
Maximum pulsed drain current (IDM)	2 A	2 A	2 A	2 A	2 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	TO-39	BCY	TO-39	BCY	-
Contacts	3	3	3	3	-
JEDEC-95 code	TO-39	TO-18	TO-39	TO-18	-

Recommended Resources

Greenhouse temperature control circuit

Measuring circuit with sinusoidal output voltage

Pressure sensor input ML2200/2208 circuit

Typical application circuit diagram of UCC3889

Internal circuit diagram of 5G28 integrated operational amplifier

Computer motherboard circuit diagram 810 3_25

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components