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RQK0606KGDQATL-H

Description
Silicon N Channel MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size107KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RQK0606KGDQATL-H Overview

Silicon N Channel MOS FET Power Switching

RQK0606KGDQATL-H Parametric

Parameter NameAttribute value
Parts packaging codeSC-59A
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance0.29 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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