QuikPAC Module Data
General description:
The
QPP-003 QuikPAC™
RF power module is an impedance
matched Class AB amplifier stage designed for use in the driver or
output stage of linear RF power amplifiers for cellular base stations.
The power transistor is fabricated using Xemod’s advanced design
LDMOS process. The gate terminal is connected directly to the
control voltage pin, allowing direct control of the bias. The user must
supply the proper value of V
GS
to set the desired quiescent current.
QPP-003
60W, 869-894 MHz
Class AB Power Stage
Features:
Single Polarity Operation
Matched for 50
Ω
RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
QuikClip or Flange Mounting
Standard Operating Conditions
Parameter
Frequency Range
Supply (Drain) Voltage
Bias (Gate) Voltage
Bias (Gate) Current, Average
RF Source & Load Impedance
Load Impedance for Stable Operation (All Phases)
Operating Baseplate Temperature
Output Device Thermal Resistance, Channel to Baseplate
Symbol
F
V
D
V
G
I
G
Ω
VSWR
T
OP
Θjc
Min
869
26.0
Nom
28.0
3.6
Max
894
32.0
2.0
Units
MHz
VDC
VDC
mA
Ohms
50
-20
1.1
10:1
+90
ºC
ºC/W
Maximum Ratings
Parameter
Supply (Drain) Voltage
Control (Gate) Voltage, V
DD
= 0 VDC
Input RF Power
Load Impedance for continuous operation without damage
Output Device Channel Temperature
Lead Soldering Temperature
Storage Temperature
Symbol
V
DD
V
G
P
IN
VSWR
Value
35
15
5
3:1
200
+190
-65 to +150
Units
VDC
VDC
W
ºC
ºC
ºC
T
STG
Performance at 28VDC & 25ºC
Parameter
Supply (Drain) Voltage
Quiescent Current (total) (1)
Power Output at 1 dB Compression (single tone)
Gain at 12W PEP (two tone)
Gain Variation over frequency at 12W Output (two tone)
Input Return Loss (50
Ω
Ref) at 12W PEP (two tone)
Drain Efficiency at 60W P
out
(single tone)
Drain Efficiency at 60W PEP (two tone)
3 Order IMD Product (2 tone at 60W PEP;1 MHz spacing)
rd
Symbol
V
D1,2
I
DQ
P
-1
G
∆G
IRL
η
η
Min
27.5
540
60
14.0
12.0
40
30
Nom
28.0
600
70
15.0
0.3
14.0
45
32
-28
Max
28.5
660
Units
VDC
mA
W
dB
0.5
dB
dB
%
%
-26
dBc
XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE
PRODUCT DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE
CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING XEMOD.
Xemod QuikPAC Data
QPP-003
www.xemod.com
Rev A (11-21-00)
Page 1 of
2
Performance at 28VDC & 25ºC (continued)
Parameter
IMD Variation – 100 kHz to 25 MHz tone spacing
2
nd
rd
Symbol
Min
Nom
1.0
-35
-55
Max
2.0
Units
dB
dBc
dBc
ns
degrees
Harmonic at 60W P
out
(single tone)
3 Harmonic at 60W P
out
(single tone)
Group (Signal) Delay
Transmission Phase Flatness
τ
d
3.6
0.5
Notes:
This QuikPAC module requires an externally supplied gate voltage (V
GS
) on each gate lead (pins 1 and 5) to set the
operating point (quiescent current- I
DQ
) of the power transistors. V
GS
may be safely set to any voltage in the range listed in
the table. This permits a wide range of quiescent current to be used. Since the operating characteristics of the module will
vary as I
DQ
changes, the bias setting will depend on the application. The data provided in the Performance section of this
data sheet was obtained with I
DQ
set to a value within the range listed (a nominal value ±10%). This particular value was
chosen to optimize gain, IMD performance, and efficiency simultaneously.
Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.
The V
GS
corresponding to a specific I
DQ
will vary from module to module and may vary between the two sides of a dual RF
module by as much as ±0.10 volts. This is due to the normal die-to-die variation in threshold voltage of LDMOS transistors.
Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a V
GS
supply with
thermal compensation if operation over a wide temperature range is required.
Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.
The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.
Package Styles
This model is available in both B1 (H10536) and B1F (H11029) package styles. Style B1F is shown for reference. Please
see the applicable outline drawing for specific dimensions.
Xemod QuikPAC Data
QPP-003
www.xemod.com
Rev A (11-21-00)
Page 2 of
2
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