PLUS247 datasheet, PDF - EEWORLD Datasheet

PLUS247: Description60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA; Categorysemiconductor Discrete semiconductor; File Size154KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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PLUS247 Overview

60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	500 V
Processing package description	PLASTIC, TO-264, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN SILVER COPPER
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	60 A
Rated avalanche energy	3000 mJ
Maximum drain on-resistance	0.1000 ohm
Maximum leakage current pulse	150 A

	PLUS247	IXTX60N50L2	IXTK60N50L2
Description	60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA	60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA	60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Number of terminals	3	3	3
Minimum breakdown voltage	500 V	500 V	500 V
Processing package description	PLASTIC, TO-264, 3 PIN	PLASTIC, TO-264, 3 PIN	PLASTIC, TO-264, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	60 A	60 A	60 A
Rated avalanche energy	3000 mJ	3000 mJ	3000 mJ
Maximum drain on-resistance	0.1000 ohm	0.1000 ohm	0.1000 ohm
Maximum leakage current pulse	150 A	150 A	150 A

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