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IXTK60N50L2

Description
60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Categorysemiconductor    Discrete semiconductor   
File Size154KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXTK60N50L2 Overview

60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

IXTK60N50L2 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage500 V
Processing package descriptionPLASTIC, TO-264, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN SILVER COPPER
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current60 A
Rated avalanche energy3000 mJ
Maximum drain on-resistance0.1000 ohm
Maximum leakage current pulse150 A

IXTK60N50L2 Related Products

IXTK60N50L2 IXTX60N50L2 PLUS247
Description 60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA 60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA 60 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Number of terminals 3 3 3
Minimum breakdown voltage 500 V 500 V 500 V
Processing package description PLASTIC, TO-264, 3 PIN PLASTIC, TO-264, 3 PIN PLASTIC, TO-264, 3 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 60 A 60 A 60 A
Rated avalanche energy 3000 mJ 3000 mJ 3000 mJ
Maximum drain on-resistance 0.1000 ohm 0.1000 ohm 0.1000 ohm
Maximum leakage current pulse 150 A 150 A 150 A
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