PBRN113ZT datasheet, PDF - EEWORLD Datasheet

PBRN113ZT: DescriptionNPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦; CategoryDiscrete semiconductor The transistor; File Size144KB，17 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBRN113ZT Overview

NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	300
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

	PBRN113ZT	PBRN113Z	PBRN113ZK	PBRN113ZS
Description	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 10 kâ¦
Maker	NXP	-	NXP	NXP
Parts packaging code	SOT-23	-	SOT-23	TO-92
package instruction	PLASTIC PACKAGE-3	-	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, R-PBCY-T3
Contacts	3	-	3	3
Reach Compliance Code	compli	-	unknown	unknown
ECCN code	EAR99	-	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10	-	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.8 A	-	0.6 A	0.6 A
Collector-emitter maximum voltage	40 V	-	40 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	300	-	300	300
JEDEC-95 code	TO-236AB	-	TO-236AB	TO-92
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PBCY-T3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	-	NPN	NPN
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	YES	NO
Terminal form	GULL WING	-	GULL WING	THROUGH-HOLE
Terminal location	DUAL	-	DUAL	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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