DI156S_R2_10001 datasheet, PDF

DI156S_R2_10001: DescriptionReverse peak voltage: 600V Average rectified current (Io): 1.5A Forward voltage drop (Vf): 1.1V @ 1A; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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DI156S_R2_10001 Overview

Reverse peak voltage: 600V Average rectified current (Io): 1.5A Forward voltage drop (Vf): 1.1V @ 1A

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-G4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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