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P4KA33A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size84KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

P4KA33A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL

P4KA33A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Breakdown voltage nominal value33 V
Maximum clamping voltage45.7 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage28.2 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
DO-204AL (DO-41)
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated
junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
J
max.
6.8 V to 43 V
400 W
1.5 W
40 A
185 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
Operating junction and storage temperature range
Notes
(1)
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
400
See next table
1.5
40
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number: 88364
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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