BGA 427
Si-MMIC-Amplifier
in SIEGET
®
25-Technologie
Preliminary data
•
Cascadable 50
Ω-gain
block
•
Unconditionally stable
•
Gain |S
21
|
2
= 18,5 dB at 1.8 GHz (appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,
I
D
=9.4mA)
•
Noise figure
NF
= 2.2 dB at 1.8 GHz
•
typical device voltage
V
D
= 2 V to 5 V
•
Reverse isolation < 35 dB (appl.2)
4
3
4
2
1
VPS05605
3
+
V
OUT
Circuit Diagram
IN
1
2
GND
EHA07378
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BGA 427
Parameter
Marking Ordering Code
BMs
Q62702-G0067
Pin Configuration
1, IN
2, GND
Symbol
Package
3, +V
4, Out
Value
25
6
150
-10
150
-65 ...+150
-65 ...+150
SOT-343
Unit
mA
V
mW
dBm
°C
Maximum Ratings
Device current
Device voltage
Total power dissipation,
T
S
≤
tbd °C
I
D
V
D
,+V
P
tot
P
RFin
T
j
T
A
T
stg
1)
R
F
input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
≤
tbd
K/W
1)
T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
1
1
Au
1998-11-01
-11-1998
BGA 427
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics
V
D
= 3 V,
Z
o
= 50W, Testfixture Appl..1
Insertion power gain
|
S
21
|
2
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Reverse isolation
f
= 1.8 GHz
Noise figure
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Intercept point at the output
f
= 1.8 GHz
Return loss input
f
= 1.8 GHz
Return loss output
f
= 1.8 GHz
S12
typ.
max.
dB
-
-
-
-
27
22
28.5
22
-
-
-
-
Unit
NF
-
-
-
1.9
2
2.2
+7
>12
>9
-
-
-
-
-
-
dBm
dB
IP
3out
RL
in
RL
out
-
-
-
Typical configuration
Appl.1
+V
100 pF
RF OUT
1 nF
BGA 427
100 pF
RF IN
Appl.2
+V
10 nF
2.2 pF
100 nH
100 pF
100 pF
RF OUT
GND
EHA07379
BGA 427
100 pF
RF IN
GND
EHA07380
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path! (appl.1)
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground!
Semiconductor Group
Semiconductor Group
2
2
Au
1998-11-01
-11-1998
BGA 427
S-Parameters at
T
A
= 25 °C, (Testfixture, Appl.1)
f
GHz
S
11
MAG
ANG
MAG
S
21
ANG
MAG
S
12
ANG
MAG
S
22
ANG
-
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
BGA 427-chip
including parasitics
+V
13
R
2
T2
R
1
R
3
C’-E’-
Diode
14
OUT
IN
11
C
1
T1
C
P3
C
P4
C
P5
R
4
C
P1
C
P2
12
GND
EHA07381
T1
T2
R
1
R
2
R
3
R
4
C
1
C
P1
C
P2
C
P3
C
P4
T501
T501
14.5kΩ
280Ω
2.4kΩ
170Ω
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
C
P5
C’-E’-diode T1
Semiconductor Group
Semiconductor Group
3
3
Au
1998-11-01
-11-1998
BGA 427
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.21024
39.251
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
3
aA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
83.23
0.16493
10.526
0.25052
15
1.9289
0.70367
0.3641
0
0.48652
0
0
0.99469
-
A
-
A
Ω
V
-
deg
-
fF
-
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0405
15.761
0.96647
0.037223
0.21215
0.12691
0.37747
0.19762
96.941
0.08161
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
Ω
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
RS =
20
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L
2
OUT
C
1
C
2
L
BO
IN
C
CB
L
1
14
C
3
L
BI
11
BGA 427
Chip
12
13
L
CI
L
CO
+V
C
BE
L
EI
C’-E’-
Diode
C
CE
L
EO
GND
EHA07382
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
C
1
=
C
2
=
C
3
=
L
1
=
L
2
=
0.36
0.4
0.3
0.15
0.36
0.4
95
6
132
28
88
8
0.6
0.4
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
nH
nH
Valid up to 3GHz
Extracted on behalf of SIEMENS Small Signal Semiconductors by
Institut für Mobil-und Satellitentechnik (IMST)
©
1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
Semiconductor Group
4
4
Au
1998-11-01
-11-1998
BGA 427
Insertion power gain
|S
21
|
2
=
f
(f)
Noise figure
NF
=
f
(f)
V
D
,
I
D
= parameter
35
V
D
,I
D
= parameter
5.0
dB
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
dB
4.0
3.5
|S
21
|
2
25
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
NF
0
1
20
3.0
2.5
15
2.0
1.5
1.0
10
5
0.5
0
-1
10
0.0
-1
10
0
1
10
GHz
10
10
GHz
10
f
f
Intercept point at the output
IP
3out
=
f
(f)
V
D
,I
D
= parameter
25
dBm
IP
3out
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
15
10
5
0
-1
10
10
0
GHz
10
1
f
Semiconductor Group
Semiconductor Group
5
5
Au
1998-11-01
-11-1998
Renesas Electronics MCUs
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