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OPA5516

Description
Pure Green LED Chip
File Size93KB,1 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
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OPA5516 Overview

Pure Green LED Chip

OPA5516
1. Material
Substrate
GaP
Epitaxial Layer GaP
Pure Green LED Chip
GaP/GaP
(N Type)
(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
Parameter
Symbol Min
V
F(1)
V
F(2)
V
R
Iv
λ
d
8
100
150
560
Typ
1.8
2.37
2.5
Max
Unit
V
V
V
mcd
nm
Condition
IF=1mA
IF=20mA
IR=10uA
IF=20mA
IF=20mA
3. Electro-Optical
Characteristics
Forward Voltage
Reverse Voltage
Brightness
Wavelength
∆λ
24
nm
IF=20mA
Note : Brightness is measured by Sorter E/T system with bare chip.
4. Mechanical Data
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
---------------------
---------------------
---------------------
---------------------
---------------------
10mil x 10mil
11mil x 11mil
115um
11mil
10.5mil
(d)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel.
+82 63 839 1111
Fax.
+82 63 835 8259
www.auk.co.kr
Substrate
P Epi
N Epi
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