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BFT66

Description
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size106KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFT66 Overview

EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS

BFT66 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)4300 MHz
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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