NT511740D0J
16MEG : x4
Fast Page Mode DRAM
NT511740D0J
DATA SHEET
REV 1.0 , JULY. 2000
1
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
Contents
Table of Contents
.................................................................................................................................................................................... 02
Description................................................................................................................................................................................................
03
Features.....................................................................................................................................................................................................03
Product Family
........................................................................................................................................................................................03
Pin Assignment
........................................................................................................................................................................................04
Electrical Characteristics
.....................................................................................................................................................................05
Absolute Maximum Ratings
............................................................................................................................................................ 05
Recommended DC Operating Conditions
....................................................................................................................................... 05
Capacitance
................................................................................................................................................................................... 05
DC Electrical Characteristics
..........................................................................................................................................................06
AC Characteristics..................................................................................................................................................................................
07
Timing Waveform....................................................................................................................................................................................
10
Read Cycle ..................................................................................................................................................................................... 10
Write Cycle (Early Write) ................................................................................................................................................................ 11
Read Modify Write Cycle ................................................................................................................................................................ 12
Fast Page Mode Read Cycle ..........................................................................................................................................................13
Fast Page Mode Write Cycle(Early Write) ......................................................................................................................................14
Fast Page Mode Modify Write Cycle ..............................................................................................................................................15
RAS
-only Refresh Cycle .............................................................................................................................................................. 16
CAS -before- RAS refresh............................................................................................................................................................ 17
Hidden Refresh Read Cycle ............................................................................................................................................................ 18
Hidden Refresh Write Cycle ............................................................................................................................................................ 19
Package Dimension................................................................................................................................................................................20
REV 1.0 , JULY. 2000
2
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
DESCRIPTION
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power
consumption (Normal or Low power) and package type (SOJ) are optional features of this family.
All of this family have
CAS
-before-
RAS
refresh,
RAS
-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 4Mx4 EDO Mode DRAM family is fabricated using NANYA’s advanced
CMOS process to realize high bandwidth, low power consumption and high reliability.
It may be used as main memory unit for microcomputer, high level computer and personal computer .
FEATURES
•
•
•
•
•
•
•
•
•
Fast Page Mode operation .
TTL(5V) compatible inputs and outputs
Single +5V
±
10% power supply
JEDEC Standard pinout
CAS
before
RAS
refresh, hidden refresh,
RAS
-only refresh capability
Refresh : 2048 cycles / 32 ms
Self-refresh capability (L-ver only)
Multi-bit test mode capability
Available in plastic SOJ packages
PRODUCT FAMILY
Family
NT511740D0J - 50/5L
NT511740D0J - 60/6L
Access Time (Max.)
tRAC
50ns
60ns
tCAC
13ns
15ns
tRC
90ns
110ns
tPC
35ns
40ns
Active Power
Dissipation
605mW
550mW
Voltage
5V
Package
26(24)-pin
SOJ
REV 1.0 , JULY. 2000
3
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
PIN CONFIGURATION
(TOP VIEW)
NT511740D0J
V
CC
DQ0
DQ1
W
RAS
NC
1
2
3
4
5
6
24
23
22
21
20
19
Vss
DQ3
DQ2
CAS
OE
A9
A10
A0
A1
A2
A3
Vcc
7
8
9
10
11
12
18
17
16
15
14
13
A8
A7
A6
A5
A4
Vss
300mil 26(24)-pin SOJ
Pin Name
A0-A10
DQ0-DQ3
Vss
RAS
CAS
W
OE
V
CC
NC
Pin Function
Address Inputs
Data Input / Output
Ground
Row Address Strob
Column Address Strob
Read/Write Input
Data Output Enable
Power +5.0 V ( + 3.3V )
No Connection
REV 1.0 , JULY. 2000
4
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operation Temperature
Symbol
V
IN
,
V
OUT
V
CC
I
OS
P
D
*
T
opr
Rating
-1.0 to +7.0
-1.0 to +7.0
50
1
0 to 70
Unit
V
V
mA
W
°C
Storage Temperature
T
stg
-55 to 150
°C
*:Ta = 25°C
•
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should
be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
(Voltage referenced to Vss, Ta = 0
°C
to 70°C )
Parameter
Supply Voltage
Ground
Input High Voltage
Symbol
V
CC
V
SS
V
IH
Min.
4.5
0
2.4
-1.0
*2
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+1.0
*1
0.8
Unit
V
V
V
V
Input Low Voltage
V
IL
*1 : V +2.0V/20ns(5V), Pulse width is measured at V
cc
cc
*2 : -2.0V/20ns(5V), Pulse width is measured at V
ss
Capacitance
( Vcc = 5V, Ta = 25°C, f = 1 MHZ )
Parameter
Input Capacitance (A0 -A11)
Input Capacitance (
RAS
,
CAS
,
WE
,
OE
Output Capacitance (DQ0-DQ3)
)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
-
-
-
Max.
5
7
7
Unit
pF
pF
pF
DC Characteristics
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Input Leakage Current (Any input 0 <= V
IN
<=
V
IN
+0.5V, all other input pins not under test =0 Volt)
5V
Output Leakage Current
(Data out is disabled, 0 <= V
OUT
<= V
CC
)
Output High Voltage Level (I
OH
= -5mA)
Output Low Voltage Level (I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
Max
5
5
-
0.4
Units
uA
uA
V
V
REV 1.0 , JULY. 2000
5
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
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