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SS22: Description2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size14KB，1 Pages; ManufacturerSSE; Websitehttp://www.sse-diode.com/

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2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA

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SHANGHAI SUNRISE ELECTRONICS CO., LTD.

SS22 THRU SS26

SURFACE MOUNT SCHOTTKY

BARRIER RECTIFIER

VOLTAGE: 20 TO 60V CURRENT: 2.0A

FEATURES

• Ideal for surface mount pick and

place application

• Low profile package

• Low power loss, high efficiency

• High current capability,low V

F

• High surge capability

• High temperature soldering guaranteed:

260

o

C/10sec/at terminal

TECHNICAL

SPECIFICATION

SMB/DO-214AA

B

A

C

D

F

G

H

C

D

.083(2.11) .012(0.305)

.077(1.96) .006(0.152)

G

H

.008(0.203) .060(1.52)

.004(0.102) .030(0.76)

MECHANICAL DATA

• Terminal: Plated leads solderable per

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

A

B

MAX. .155(3.94) .180(4.57)

MIN. .130(3.30) .160(4.06)

E

F

MAX. .220(5.59) .096(2.44)

MIN. .205(5.21) .084(2.13)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25

o

C, unless otherwise stated, for capacitive load,

derate current by 20%)

RATINGS

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T

L

=100

o

C)

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

Maximum DC Reverse Current

T

a

=25

o

C

(at rated DC blocking voltage)

T

a

=100

o

C

SYMBOL

V

RRM

V

RMS

V

DC

I

F(AV)

I

FSM

V

F

I

R

SS22

20

14

20

SS23

30

21

30

SS24

40

28

40

2.0

50

SS25

50

35

50

SS26

60

42

60

UNITS

V

A

0.5

10.0

0.7

V

mA

pF

o

200

C

J

Typical Junction Capacitance

(Note 1)

25

R

θ

(ja)

Typical Thermal Resistance

(Note 2)

-65 to +150

T

STG

,T

J

Storage and Operation Junction Temperature

Note:

1.Measured at 1.0 MHz and applied voltage of 4.0V

dc

2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

C/W

o

C

http://www.sse-diode.com

SS22 Related Products

	SS22	SS26	SS24	SS25	SS23
Description	2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
Number of terminals	-	2	-	2	2
Number of components	-	1	-	1	1
Processing package description	-	SMB, 2 PIN	-	Plastic, SMB, 2 PIN	Plastic, SMAJ, 2 PIN
state	-	ACTIVE	ACTIVE	TRANSFERRED	DISCONTINUED
packaging shape	-	Rectangle	-	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	-	Yes	Yes
Terminal form	-	C BEND	-	C BEND	C BEND
Terminal location	-	pair	-	pair	pair
Packaging Materials	-	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	-	SCHOTTKY	-	SCHOTTKY	SCHOTTKY
structure	-	single	-	single	single
Diode component materials	-	silicon	-	silicon	silicon
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	-	EFFICIENCY	GENERAL PURPOSE
Phase	-	1	-	1	1
Maximum repetitive peak reverse voltage	-	60 V	-	50 V	30 V
Maximum average forward current	-	2 A	-	2 A	2 A
Maximum non-repetitive peak forward current	-	50 A	-	75 A	50 A

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