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SS23

Description
2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size14KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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SS23 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC

SS23 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMAJ, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SS22 THRU SS26
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
VOLTAGE: 20 TO 60V CURRENT: 2.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Low power loss, high efficiency
• High current capability,low V
F
• High surge capability
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMB/DO-214AA
B
A
C
D
F
G
H
C
D
.083(2.11) .012(0.305)
.077(1.96) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
A
B
MAX. .155(3.94) .180(4.57)
MIN. .130(3.30) .160(4.06)
E
F
MAX. .220(5.59) .096(2.44)
MIN. .205(5.21) .084(2.13)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
L
=100
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
(at rated DC blocking voltage)
T
a
=100
o
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
SS22
20
14
20
SS23
30
21
30
SS24
40
28
40
2.0
50
SS25
50
35
50
SS26
60
42
60
UNITS
V
V
V
A
A
0.5
0.5
10.0
0.7
V
mA
mA
pF
o
200
C
J
Typical Junction Capacitance
(Note 1)
25
R
θ
(ja)
Typical Thermal Resistance
(Note 2)
-65 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0V
dc
2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
C/W
o
C
http://www.sse-diode.com

SS23 Related Products

SS23 SS26 SS24 SS25 SS22
Description 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals 2 2 - 2 -
Number of components 1 1 - 1 -
Processing package description Plastic, SMAJ, 2 PIN SMB, 2 PIN - Plastic, SMB, 2 PIN -
state DISCONTINUED ACTIVE ACTIVE TRANSFERRED -
packaging shape Rectangle Rectangle - Rectangle -
Package Size SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
surface mount Yes Yes - Yes -
Terminal form C BEND C BEND - C BEND -
Terminal location pair pair - pair -
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy -
Craftsmanship SCHOTTKY SCHOTTKY - SCHOTTKY -
structure single single - single -
Diode component materials silicon silicon - silicon -
Diode type rectifier diode rectifier diode rectifier diode rectifier diode -
application GENERAL PURPOSE GENERAL PURPOSE - EFFICIENCY -
Phase 1 1 - 1 -
Maximum repetitive peak reverse voltage 30 V 60 V - 50 V -
Maximum average forward current 2 A 2 A - 2 A -
Maximum non-repetitive peak forward current 50 A 50 A - 75 A -

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