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HSMS-282L-TR1G

Description
SILICON, C BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size455KB,15 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Environmental Compliance
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HSMS-282L-TR1G Overview

SILICON, C BAND, MIXER DIODE

HSMS-282L-TR1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAVAGO
Parts packaging codeSC-70
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 3 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.34 V
frequency bandC BAND
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
Maximum reverse current0.1 µA
Reverse test voltage1 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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