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SE8841A

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6.5A Gate-source threshold voltage: 950mV @ 250uA Drain-source on-resistance: 15mΩ @ 6A, 4.5V Maximum power dissipation ( Ta=25°C): 1.5W Type: Dual N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,6 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE8841A Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6.5A Gate-source threshold voltage: 950mV @ 250uA Drain-source on-resistance: 15mΩ @ 6A, 4.5V Maximum power dissipation ( Ta=25°C): 1.5W Type: Dual N-channel

SE8841A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C6.5A
Gate-source threshold voltage950mV @ 250uA
Drain-source on-resistance15mΩ @ 6A,4.5V
Maximum power dissipation (Ta=25°C)1.5W
typeDual N-channel

SE8841A Preview

Download Datasheet
SE8841A
Dual N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
Voltage and Current Improved Shoot-Through
V
DS
= 20V
R
DS(ON)
= 11.5mΩ @ V
GS
=4.5V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
20
±12
6.5
25
1.5
-55 to 150
Units
V
V
A
W
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
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