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Datasheet> All Categories > Discrete semiconductor> The transistor> STH8NA60FI
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STH8NA60FI

Description
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size123KB，10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STH8NA60FI Overview

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STH8NA60FI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)480 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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®
STW8NA60
STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 8NA60
STH8NA60F I
V
DSS
600 V
600 V
R
DS(on)
<1
Ω
<1
Ω
I
D
8 A
5 A
s
s
s
s
s
s
s
TYPICAL R
DS(on)
= 0.92
Ω
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
2
1
3
TO-247
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
ST W8NA60
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
V
ISO
T
s tg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Unit
STH8NA60FI
600
600
±
30
V
V
V
5
3.2
32
60
0.48
4000
A
A
A
W
W /
o
C
V
o
o
8
5.1
32
150
1.2
-65 to 150
150
C
C
(•) Pulse width limited by safe operating area
October 1998
1/10

STH8NA60FI Related Products

STH8NA60FI H8NA60FI STH8NA60 STW8NA60
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 TO-247, 3 PIN
Reach Compliance Code compli - compli _compli
Avalanche Energy Efficiency Rating (Eas) 480 mJ - 320 mJ 480 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V - 600 V 600 V
Maximum drain current (ID) 5 A - 8 A 8 A
Maximum drain-source on-resistance 1 Ω - 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-218 - TO-218 TO-247
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 32 A - 32 A 32 A
Certification status Not Qualified - Not Qualified Not Qualified
surface mount NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON

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Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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