STH8NA60 datasheet, PDF - EEWORLD Datasheet

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STH8NA60: DescriptionN - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size123KB，10 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STH8NA60 Overview

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STH8NA60 Parametric

Parameter Name	Attribute value
Maker	STMicroelectronics
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	320 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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STW8NA60

STH8NA60FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

STW 8NA60

STH8NA60F I

DSS

600 V

DS(on)

Ω

8 A

5 A

TYPICAL R

DS(on)

= 0.92

Ω

30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

TO-247

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

ST W8NA60

DGR

(•)

tot

ISO

s tg

Drain-source Voltage (V

= 0)

Drain- gate Voltage (R

= 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at T

= 25

Drain Current (continuous) at T

= 100 C

Drain Current (pulsed)

T otal Dissipation at T

= 25

Derating Factor

Insulation W ithstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

Unit

STH8NA60FI

600

3.2

0.48

4000

W /

5.1

150

1.2



-65 to 150

150

(•) Pulse width limited by safe operating area

October 1998

1/10

STH8NA60 Related Products

	STH8NA60	H8NA60FI	STW8NA60	STH8NA60FI
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
package instruction	FLANGE MOUNT, R-PSFM-T3	-	TO-247, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli	-	_compli	compli
Avalanche Energy Efficiency Rating (Eas)	320 mJ	-	480 mJ	480 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	-	600 V	600 V
Maximum drain current (ID)	8 A	-	8 A	5 A
Maximum drain-source on-resistance	1 Ω	-	1 Ω	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-218	-	TO-247	TO-218
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A	-	32 A	32 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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