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DO224B-4M

Description
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon, DO-7,
CategoryDiscrete semiconductor    diode   
File Size78KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

DO224B-4M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon, DO-7,

DO224B-4M Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other features3% MATCHED SET OF FOUR DIODES
Minimum breakdown voltage12 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio7
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
minimum quality factor200
Maximum reverse current0.01 µA
Reverse test voltage10 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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