BCP55 datasheet, PDF - EEWORLD Datasheet

BCP55: Description1 A, 45 V, NPN, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size132KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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1 A, 45 V, NPN, Si, POWER TRANSISTOR

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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