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PNMT45V2

Description
PNMT45V2 N-channel MOSFET
CategoryDiscrete semiconductor   
File Size124KB,6 Pages
ManufacturerPrisemi
Websitehttp://www.prisemi.com/

Shanghai Xindao Electronic Technology Co., Ltd. is located in Zhangjiang High-tech Park. It is a high-tech enterprise dedicated to the research and development, design and sales of integrated circuit chips.

Core Conductor Electronics is actively committed to the technical research of semiconductor power devices and high-end integrated circuit chips. The company's scientific research investment has increased by more than 70% for many consecutive years, and has established a first-class laboratory in China, undertaking a number of Shanghai and national scientific research projects.

Providing you with excellent products, excellent quality, and excellent services is the constant pursuit of Xindao Electronics. Over the years, Xindao Electronics has always adhered to the core of user needs. While focusing on the development of the domestic market, it has actively expanded overseas markets. At present, its products have been exported to the United States, Japan, South Korea, Southeast Asia and other countries and regions. Xindao Electronics has won the trust and praise of many customers with high-quality products and first-class services, and established a good brand image for the company.

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PNMT45V2 Overview

PNMT45V2 N-channel MOSFET

Parameters

• Configuration:Single-N


• VDS(V):45 V


• VGS(V):12 V


• ID(A):2 A


• RDS@VGS=10V(mΩ):130 mΩ


• RDS@VGS=4.5V(mΩ):150 mΩ


• RDS@VGS=2.5V(mΩ):220 mΩ


• VGS(th)(V)min:0.5 V


• VGS(th)(V)typ:1.0 V


• VGS(th)(V)max:1.5 V


• Package:SOT-23

PNMT45V2 Preview

Download Datasheet
PNMT45V2
2.5V Drive N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low
on-resistance.
D(3)
MOSFET Product Summary
V
DS
(V)
45
R
DS(on)
(mΩ)
100@ V
GS
=10V
110@ V
GS
=4.5V
160@ V
GS
=2.5V
I
D
(A)
G(1)
2
S(2)
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Source
diode)
Total Power Dissipation
Channel temperature
Range of storage temperature
current(Body
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
I
D
I
S
I
SP
P
D
Tch
Tstg
Value
45
±12
2.0
8
0.8
8
1.0
150
-55 to +150
Units
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)*
Limits
125
Units
℃/W
Body diode characteristics(Source-drain)(Ta=25℃)
Parameter
Forward voltage
Symbol
V
SD
Min.
--
Typ.
--
Max.
1.2
Units
V
Conditions
I
S
=0.8A,V
GS
=0V
Rev.06
1
www.prisemi.com
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