GBPC50005W datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> GBPC50005W

GBPC50005W: DescriptionSingle Phase 50A Silicon Bridge Rectifiers Single Phase 50A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size123KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

Parametric View All

GBPC50005W Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	GBPC50005W	-	-	View	Buy Now

GBPC50005W Overview

Single Phase 50A Silicon Bridge Rectifiers Single Phase 50A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 50A Silicon Bridge Rectifiers

Product model: GBPC50005W

product features:

UL Recognized File # E-230084

Ideal for printed circuit boards

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

260℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic

Lead: solder plated

Polarity: As marked

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 50V

Maximum RMS Voltage VRMS voltage effective value: 35V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 50V

Maximum Average Forward Rectified Current @TC=55℃ IF(AV) Maximum forward current: 50 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 400 A

Maximum Instantaneous Forward Voltage @ 25A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated DC blocking voltage Per Element IR Maximum reverse leakage current: 10μA

Typical Thermal Resistance (Note) RθJC Thermal resistance coefficient: 1.5 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: GBPC-W

GBPC50005W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	500 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	50 A
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Base Number Matches	1

Recommended Resources

BX3 series AC arc welding machine circuit b

Thyristor two-tone lighting circuit (2)

Signal generator circuit with small distortion

3500-3600kHz variable frequency oscillator with resistor tuning

diode AND gate circuit

Computer motherboard circuit diagram 820 2_42

(Transfer) CC2640R2F BLE5.0 Bluetooth protocol stack Generic Attribute Profile (GATT): [i=s]This post was last edited by freebsder on 2019-3-26 12:00[/i] [align=left][b][size=15.0pt]Generic Attribute Profile (GATT)[/size][/b][/align][align=left]Just as the GAP layer is responsible for c...; freebsder RF/Wirelessly

LSM6DS3 sensor problem, help!: Dear experts, please help me! I recently helped a customer purchase a batch of LSM6DS3TR chips (made in Thailand). After the customer installed them on the board, they found that the S3 chip failed to...; keith123 MEMS sensors

IC Design Process: IC design process (from USTC) 2. Implementation method; IC can be divided into two types from the production purpose: general-purpose IC (such as CPU, DRAM, interface chip, etc.) and ASIC (Application...; gjgd FPGA/CPLD

Disadvantages of Traditional Differential Amplifiers and Solutions: The classic discrete difference amplifier design is very simple, what's the complexity of an op amp and a four-resistor network? The classic four-resistor difference amplifier is shown in Figure 1, bu...; Aguilera Analogue and Mixed Signal

The Differences and Relationships between POP3, SMTP and IMAP: [backcolor=white][size=4][color=#000000]1. Introduction to POP3[/color][/size][/backcolor] [backcolor=white][size=4][color=#000000] POP3, full name is "Post Office Protocol - Version 3", that is, "Pos...; 灞波儿奔 Wireless Connectivity

Showing Products (4) - Atmel Development Board: ATMEL's development boards are all very good, with exquisite design, comprehensive functions, and excellent workmanship, and are very worthy of collection.XMEGA series xmega-B1 xplainedATmega168 xplai...; dcexpert Special Edition for Assessment Centres

Popular Components