BC859A datasheet, PDF - EEWORLD Datasheet

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BC859A: Description100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size59KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BC859A Overview

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC859A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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BC856/857/858/859/860

Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

Collector-Base Voltage

: BC856

: BC857/860

: BC858/859

CEO

Collector-Emitter Voltage

: BC856

: BC857/860

: BC858/859

EBO

STG

Emitter-Base Voltage

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

-65

-45

-30

-5

-100

310

150

-65 ~ 150

°C

-80

-50

-30

Parameter

Value

Units

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

(sat)

(on)

Parameter

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

: BC856/857/858

: BC859/860

: BC859

: BC860

Test Condition

= -30V, I

= -5V, I

= -2mA

= -10mA, I

= -0.5mA

= -100mA, I

= -5mA

= -10mA, I

= -0.5mA

= -100mA, I

= -5mA

= -5V, I

= -2mA

= -5V, I

= -10mA

= -5V, I

= -10mA

f=100MHz

= -10V, I

=0, f=1MHz

= -5V, I

= -200µA

f=1KHz, R

=2KΩ

= -5V, I

= -200µA

=2KΩ, f=30~15000Hz

1.2

-600

Min.

110

-90

-250

-700

-900

-660

150

-750

-800

Typ.

Max.

-15

800

-300

-650

MHz

Units

Rev. A2, August 2002

BC859A Related Products

	BC859A	BC856C	BC858B	BC859B	BC859C	BC860A	BC860B
Description	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	compli	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	65 V	30 V	30 V	30 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	420	200	200	420	110	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.31 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Other features	LOW NOISE	-	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Base Number Matches	1	-	-	1	-	1	1
Maker	-	Fairchild	Fairchild	-	Fairchild	-	Fairchild

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