GBJ4M datasheet, PDF - EEWORLD Datasheet

GBJ4M: DescriptionBridge Rectifier Diode, 4A, 1000V V(RRM),; CategoryDiscrete semiconductor diode; File Size107KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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GBJ4M Overview

Bridge Rectifier Diode, 4A, 1000V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO

	GBJ4M	GBJ4A	GBJ4J	GBJ4D	GBJ4G	GBJ4B
Description	Bridge Rectifier Diode, 4A, 1000V V(RRM),	Bridge Rectifier Diode, 4A, 50V V(RRM),	Bridge Rectifier Diode, 4A, 600V V(RRM),	Bridge Rectifier Diode, 4A, 200V V(RRM),	Bridge Rectifier Diode, 4A, 400V V(RRM),	Bridge Rectifier Diode, 4A, 100V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	4 A	4 A	4 A	4 A	4 A	4 A
Maximum repetitive peak reverse voltage	1000 V	50 V	600 V	200 V	400 V	100 V
surface mount	NO	NO	NO	NO	NO	NO
Maker	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	-	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.

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