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GBJ4G

Description
Bridge Rectifier Diode, 4A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size107KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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GBJ4G Overview

Bridge Rectifier Diode, 4A, 400V V(RRM),

GBJ4G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage400 V
surface mountNO

GBJ4G Related Products

GBJ4G GBJ4A GBJ4J GBJ4D GBJ4B GBJ4M
Description Bridge Rectifier Diode, 4A, 400V V(RRM), Bridge Rectifier Diode, 4A, 50V V(RRM), Bridge Rectifier Diode, 4A, 600V V(RRM), Bridge Rectifier Diode, 4A, 200V V(RRM), Bridge Rectifier Diode, 4A, 100V V(RRM), Bridge Rectifier Diode, 4A, 1000V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 400 V 50 V 600 V 200 V 100 V 1000 V
surface mount NO NO NO NO NO NO
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.

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