Cache SRAM, 256X4, 4ns, MOS, CDIP22, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Vitesse Semiconductor Corporation |
Parts packaging code | DIP |
package instruction | DIP, DIP22,.4 |
Contacts | 22 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 4 ns |
I/O type | SEPARATE |
JESD-30 code | R-CDIP-T22 |
JESD-609 code | e0 |
length | 28 mm |
memory density | 1024 bit |
Memory IC Type | CACHE SRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 22 |
word count | 256 words |
character code | 256 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256X4 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP22,.4 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 4.064 mm |
Maximum slew rate | 0.3 mA |
Maximum supply voltage (Vsup) | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | MOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |
VS12G422TDC-4 | VS12G422TDC-5 | VS12G422TDC-6 | |
---|---|---|---|
Description | Cache SRAM, 256X4, 4ns, MOS, CDIP22, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22 | Cache SRAM, 256X4, 5ns, MOS, CDIP22, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22 | Cache SRAM, 256X4, 6ns, MOS, CDIP22, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22 |
Is it lead-free? | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | Vitesse Semiconductor Corporation | Vitesse Semiconductor Corporation | Vitesse Semiconductor Corporation |
Parts packaging code | DIP | DIP | DIP |
package instruction | DIP, DIP22,.4 | DIP, DIP22,.4 | DIP, DIP22,.4 |
Contacts | 22 | 22 | 22 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
Maximum access time | 4 ns | 5 ns | 6 ns |
I/O type | SEPARATE | SEPARATE | SEPARATE |
JESD-30 code | R-CDIP-T22 | R-CDIP-T22 | R-CDIP-T22 |
JESD-609 code | e0 | e0 | e0 |
length | 28 mm | 28 mm | 28 mm |
memory density | 1024 bit | 1024 bit | 1024 bit |
Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM |
memory width | 4 | 4 | 4 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 22 | 22 | 22 |
word count | 256 words | 256 words | 256 words |
character code | 256 | 256 | 256 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C |
organize | 256X4 | 256X4 | 256X4 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE |
Exportable | YES | YES | YES |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP | DIP | DIP |
Encapsulate equivalent code | DIP22,.4 | DIP22,.4 | DIP22,.4 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
power supply | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 4.064 mm | 4.064 mm | 4.064 mm |
Maximum slew rate | 0.3 mA | 0.3 mA | 0.3 mA |
Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO |
technology | MOS | MOS | MOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 10.16 mm | 10.16 mm | 10.16 mm |